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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3659
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3659 PACKAGE Isolated TO-220
FEATURES
*4.5V drive available. *Low on-state resistance, RDS(on)1 = 5.7 m MAX. (VGS = 10 V, ID = 40 A) *Low gate charge, QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A) *Built-in gate protection diode. *Avalanche capability ratings. *Isolated TO-220 package.
ABSOLUTE MAXIMUM RATING (TA = 25C)
Drain to source voltage (VGS = 0 V) Gate to source voltage (VDS = 0 V) Drain current (DC) (TC = 25C) Drain current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
20 20 65 260 2.0 25 150 -55 to +150 35 122
V V A A W W C C A mJ
Total power dissipation (TA = 25C) Total power dissipation (TC = 25C) Channel temperature Storage temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Note 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 10 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16251EJ2V0DS00 (2nd edition) Date Published June 2002 NS CP (K) Printed in Japan
(c)
2002
2SK3659
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Symbol IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 10 V ID = 65 A IF = 65 A, VGS = 0 V IF = 65 A, VGS = 0 V di/dt = 100 A/s Test Conditions VDS = 20 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A VGS = 4.5 V, ID = 40 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V, ID = 40 A VGS = 10 V RG = 10 1.5 15 4.6 7.1 1700 700 250 16 14 50 12 32 6.0 8.3 1.0 45 34 5.7 9.9 MIN. TYP. MAX. 10 10 2.5 Unit
A A
V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D16251EJ2V0DS
2SK3659
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
30 100
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
0 25 50 75 100 125 150 175
25
80
20
60
15
40
10
20
5
0
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse) RDS(on) Limited PW = 100 s 1 ms 10 ms 100 ms
TC - Case Temperature - C
100
ID - Drain Current - A
10
ID(DC)
1
DC Power Dissipation Limited
TC = 25C Single Pulse
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 62.5C/W
10
Rth(ch-C) = 5C/W
1
0.1 Single Pulse 0.01 10
100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D16251EJ2V0DS
3
2SK3659
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
300 Pulsed 250 VGS = 10 V
100 1000
Pulsed VDS = 10 V
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
ID - Drain Current - A
200
10
Tch = 150C 75C 25C -55C
150 4.5 V 100
1
50
0.1
0 0 0.5 1 1.5 2
0.01 1 2 3 4 5 6
VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
3.0 100
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
Pulsed VDS = 10 V
VGS(off) - Gate Cut-off Voltage - V
2.5
| yfs | - Forward Transfer Admittance - S
VDS = 10 V ID = 1 mA
2.0
10
1.5
1.0
1
Tch = 150C 75C 25C -55C
0.5
0.0 -50 0 50 100 150
0.1 0.01
0.1
1
10
100
Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m
25 Pulsed 20
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
20 Pulsed
15
15
10
10
VGS = 4.5 V
ID = 40 A 5
5 10 V 0 0.1 1 10 100 1000
0 0 5 10 15 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D16251EJ2V0DS
2SK3659
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
14 12 10
VGS = 4.5 V ID = 40 A Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000 VGS = 10 V f = 1 MHz
Ciss, Coss, Crss - Capacitance - pF
Ciss 1000 Coss Crss 100
8
10 V
6 4 2 0 -50
0
50
100
150
10 0.01
0.1
1
10
100
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS
1000
20
VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10
VDS - Drain to Source Voltage - V
16
VDD = 16 V 10 V
8
100
td(off) tf td(on)
12 VGS 8
6
4
10
tr
4 VDS ID = 65 A 0 0 5 10 15 20 25 30 35
2
1 0.1 1 10 100
0
ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
ISD - Diode Forward Current - A
100 VGS = 10 V 0V 10
trr - Reverse Recovery Time - ns
100
1
10
0.1 Pulsed 0.01 0 0.5 1 1.5
VGS = 0 V di/dt = 100 A/s
1 0.1 1 10 100
VSD - Source to Drain Voltage - V
ID - Drain Current - A
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = 10 V VGS = 10 V RG = 10
Data Sheet D16251EJ2V0DS
5
2SK3659
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
IAS = 35 A
100
VDD = 10 V RG = 25 VGS = 20 0 V IAS 35 A
SINGLE AVALANCHE ENERGY DERATING FACTOR
IAS - Single Avalanche Current - A
10
EAS = 122 mJ
Energy Derating Factor - %
80
60
40
1
VDD = 10 V RG = 25 VGS = 20 0 V Starting Tch = 25C
20
0.1 0.01
0
0.1
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D16251EJ2V0DS
2SK3659
PACKAGE DRAWING (Unit: mm)
Isolated TO-220 (MP-45F)
10.00.3
3.20.2
4.50.2 2.70.2
EQUIVALENT CIRCUIT
15.00.3 30.1 12.00.2
Drain
40.2
13.5 MIN.
Gate
Body Diode
0.70.1 2.54 TYP.
1.30.2 1.50.2 2.54 TYP. 0.650.1
2.50.1
Gate Protection Diode
Source
1.Gate 2.Drain 3.Source 123
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Data Sheet D16251EJ2V0DS
7
2SK3659
* The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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